PRISMA+ Colloquium

Nov. 30, 2011 at 1 p.m. in Minkowski-Raum, 05-119, Staudinger Weg

Prof. Dr. Tobias Hurth
Institut für Physik, THEP
hurth@uni-mainz.de

High-precision measurement of the g-factor of the electron bound in hydrogenlike and lithiumlike silicon
Anke Wagner (Institut für Physik, Mainz)


The g-factor of the electron bound in hydrogen-like 28Si13+ has been experimentally determined with an uncertainty as low as 5∙10-10, which provides the most stringent test of bound-state quantum electrodynamical (BS-QED) calculations in high electric fields up to date. In comparison to the g-factor measurements of hydrogen-like carbon and oxygen, not only the nuclear charge but also the experimental accuracy have been increased resulting in a higher sensitivity towards the BS-QED corrections. The measurement has been performed with a single28Si13+-ion confined in a cylindrical Penning trap system. To determine the g-factor, the Larmor spin-precession frequency and the free cyclotron frequency of the ion have to be measured. As a next step, the g-factor measurement of lithium-like silicon is currently under progress to test the calculations for the electron-electron correlation. The measurement principle as well as the results will be presented.