Electrical manipulation of exchange bias for memory and computing applications
Ao Du (ETHZ Zürich, Switzerland)

Antiferromagnets (AFM) hold significant promise as ideal candidates for high-density and ultrafast memory applications. Electrical manipulation of exchange bias has emerged as an effective solution to integrate AFMs into magnetic memories as active elements. With this motivation, we demonstrate the electrical detection of antiferromagnetism in three-terminal magnetic tunnel junctions (MTJs) via exchange bias. A polarity-dependent switching of the exchange bias, driven by spin-orbit torque, is observed with a switching time as short as 0.6 nanoseconds. By incorporating spin-transfer torque, we achieve a substantial reduction in the critical switching current density for spin-orbit torque, enabling reconfigurable AND/OR logic functionalities within a single device. Utilizing the stable multi-state behavior and auto-reset features of this MTJ, we propose an all-spin spiking neural network with a low recognition error rate. These findings hold potential for advancing high-performance memories and in-memory computing.