Theoretical analysis of the polartion reflection spectra of a heterostructure with a wide quantum well in transfer magnetic field
Bodnar Stanislav (CNRS-CRHEA, France I)

Fundamental properties of exciton in semiconductor nanostructures nowadays is a very important topic in semiconductor physics. This could include the spin dynamics of the exciton, behavior of exciton in confined system (such as quantum wells, nanowires and quantum dots) and in strained system. Also, a variation of exciton states in high magnetic field is still an interesting challenge.

In our work, reflection spectra of a nanostructure with the 240-nm GaAs quantum well are experimentally studied in the magnetic field applied transverse to the direction of the exciton propagation. The analysis of spectra demonstrated the increasing of heavy-hole exciton masses with increasing magnetic field. The experimentally observed modification of exciton mass caused by the magneto-induced mixing of the ground and excited exciton states.