Seminar Festkörper- und Grenzflächenphysik KOMET - experimentell

 June 17, 2014 at noon c.t. in Newton-Raum, Staudingerweg 9, 1. Stock, Raum 122 (Nebengebäude)

Prof. Dr. Hans-Joachim Elmers
Institut für Physik, KOMET 5
elmers@uni-mainz.de

Prof. Dr. H. J. Elmers

Note: Ansprechpartner: Herr Schönhense

Field emission from semiconductor tip under high constant voltage with applying alternating low-voltage addition
Anna Zaporozhchenko (Sumy State University, Rimsky-Korsakow-Str. 2, 40007 Sumy, Ukraine)


We investigated photoemission current from high resistive p-type Si tip with resistivity of 4×103 Ω·cm with applying illumination with light quanta with energy of 1.3 eV and constant voltage of 0.7 - 5.0 kV. The addition of the emission current under the influence of the component of alternating voltage of 30 - 60 V and a frequency of 10 - 106 Hz up to 50%. This addition has a nontrivial character. It’s sign can be both positive and negative. It was investigated an influence of light intensity, temperature, surface conditions, etc on it.