Seminar Festkörper- und Grenzflächenphysik KOMET - experimentell
May 2, 2013 at 1 p.m. c.t. in Medien-Raum, Staudingerweg 7, 3. Stock, Raum 431Prof. Dr. Hans-Joachim Elmers
Institut für Physik, KOMET 5
elmers@uni-mainz.de
Prof. Dr. H. J. Elmers
This study addresses the realization of a novel topological insulator (TI) thus far only proposed theoretically, which is formed by ��-Sn grown on InSb(100) substrates. The epitaxial growth opens various pathways to access and manipulate the topological surface state (TSS).
Here we report on the electronic structure of ��-Sn measured by angle-resolved photoelectron spectroscopy (ARPES) and complemented by density functional theory (DFT). We observe the formation of a TSS for tellurium-doped films. Constant energy surfaces of the TSS reflect the lattice symmetry of the bulk material, as is reported for other TIs. The Fermi level in ARPES is located close to the crossing point and its energetic position can be controlled by varying the tellurium concentration.
Our experimental findings are consistent with DFT calculations, which document the formation of a TSS.