Investigations of Thin BI Films and Nanocrystals on the GE(111) Surface via Scanning Tunneling Microscopy (STM)
Aneliia Shchyrba (Taras Shevchenko National University of Kiev, Kiev, Ukraine)

Abstract Bismuth attracts attention due to the substantial difference between its bulk and surface electronic properties, which varys from semiconductor to metallic. The presence of strong spin-orbit coupling leads to Rashba-type spin splitting of the surface state. Bi on a semiconductor surface is a model system for prospective spintronic devices, also such objects are interesting for fundamental research.
Submonolayer Bi properties and growth mode of Bi on Ge(111) were investigated by STM, Auger-electron spectroscopy (AES) and atomic-force microscopy (AFM). The thickness ranged up to 12.5 monolayers. Deviations from layer-by-layer growth mode and change of electronic behaviour of these species with increase of Bi amount was observed. The main conditions for formation of a structured uniform Bi film were found and changes in annealed Bi films were defined.