Spin qubit integration in silicon and diamond
Prof. Dr. Thomas Schenkel (Lawrence Berkeley National Laboratory)

Electron and nuclear spins of donors in silicon and of color centers in diamond are promising quantum bits (qubit) candidates. Ion implantation is an established method for controlled doping of materials. Integration of ion beams with scanning probes for imaging and alignment and the development of single ion detection methods can enable the formation of multi-qubit devices. Challenges for reliable single atom placement by ion implantation will be discussed together with our progress towards single donor spin readout in silicon transistors and steps towards device integration of color centers in diamond.